Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: ROHM R6011ENJTL Power Field Effect Transistor, MOSFET, N-channel, 11 A, 600 V, 0.34 ohm, 10 V, 4 V New76815+$19.656050+$18.8160200+$18.3456500+$18.22801000+$18.11042500+$17.97605000+$17.89207500+$17.8080
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Category: Medium high voltage MOS transistorDescription: INFINEON SPB17N80C3ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 17 A, 800 V, 0.25 ohm, 10 V, 3 V15145+$17.256350+$16.5189200+$16.1059500+$16.00271000+$15.89942500+$15.78145000+$15.70777500+$15.6339
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STB28N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V new13625+$14.612150+$13.9877200+$13.6380500+$13.55061000+$13.46312500+$13.36325000+$13.30087500+$13.2383
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STB33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V new49395+$26.913550+$25.7634200+$25.1193500+$24.95831000+$24.79722500+$24.61325000+$24.49827500+$24.3832
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHB33N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 33A, TO-263-322995+$22.445350+$21.4861200+$20.9489500+$20.81461000+$20.68042500+$20.52695000+$20.43107500+$20.3350
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R099C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V32905+$28.360850+$27.1488200+$26.4701500+$26.30041000+$26.13072500+$25.93685000+$25.81567500+$25.6944
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R380C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V96935+$6.713625+$6.216350+$5.8681100+$5.7190500+$5.61952500+$5.49525000+$5.445410000+$5.3708
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R299CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 11 A, 650 V, 0.27 ohm, 10 V, 3 V746410+$8.7504100+$8.3129500+$8.02121000+$8.00662000+$7.94835000+$7.87547500+$7.817010000+$7.7879
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R199CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 16 A, 650 V, 0.18 ohm, 10 V, 3 V76741+$47.623910+$44.8914100+$42.8615250+$42.5492500+$42.23701000+$41.88562500+$41.57335000+$41.3782
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB65R660CFDATMA1 Power Field Effect Transistor, MOSFET, N-channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V884510+$6.9144100+$6.5687500+$6.33821000+$6.32672000+$6.28065000+$6.22307500+$6.176910000+$6.1538
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Category: Medium high voltage MOS transistorDescription: ROHM R6007ENJTL Power Field Effect Transistor, MOSFET, N-channel, 7 A, 600 V, 0.57 ohm, 10 V, 4 V New4466
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Category: Medium high voltage MOS transistorDescription: ROHM R6011KNJTL Power Field Effect Transistor, MOSFET, N-channel, 11 A, 600 V, 0.34 ohm, 10 V, 5 V New7289
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Category: Medium high voltage MOS transistorDescription: ROHM R6007KNJTL Power Field Effect Transistor, MOSFET, N-channel, 7 A, 600 V, 0.57 ohm, 10 V, 5 V New7751
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R099CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 31 A, 650 V, 0.09 ohm, 10 V, 3 V1122
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB070N65S3 功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V 新5567
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB65R110CFDATMA1 功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V2572
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Category: Medium high voltage MOS transistorDescription: ROHM R6024ENJTL 功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V 新6467
